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參數資料
| 型號： | S1337 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For UV to IR, precision photometry |
| 中文描述： | 硅光電二極管對紫外線，紅外線，精密光度法 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 142K |
| 代理商： | S1337 |
S1337 series
For UV to IR, precision photometry
Features
l
High UV sensitivity: QE 75 % (
λ
=200 nm)
l
Low capacitance
Applications
l
Analytical equipment
l
Optical measurement equipment
P H O T O D I O D E
Si photodiode
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Package
Active area
size
Effective active
area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
/Q
/R
/Q
/R
/Q
/R
/Q
/R
2.7 × 15
1.1 × 5.9
5.9
6 × 7.6
2.4 × 2.4
5.7
8.9 × 10.1
5.8 × 5.8
33
15 × 16.5
10 × 10
100
5
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
λ
p
200 nm
He-Ne
laser
GaAs
LED
930
nm (μA) (μA)
4.0
0.6
4.4
4.0
0.6
4.4
20
0.6
22
65
0.6
70
Min. Typ.
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
190 to 1100
320 to 1100
190
to 1100
320 to 1100
190 to 1100
320 to 1100
190 to 1100
320 to 1100
(nm)
Min. Typ.nm
(pA)
(times/° C)
(μs)
(pF)
Min.
(G
)
Typ.
(G
)
(W/Hz
1/2
)
-14
0.2 0.61.0 × 10
-15
8.1 × 10
-15
0.3 1
6.5 × 10
-15
-14
0.1 0.41.3 × 10
-14
-14
0.05
0.21.8 × 10
-14
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
* Window material Q: quartz glass, R: resin coating
0.5 0.10 0.12 0.33 0.5
0.62
-
-
0.5 0.10 0.12 0.33 0.5
0.62
-
-
0.5 0.10 0.12 0.33 0.5
0.62
-
-
0.5 0.10 0.12 0.33 0.5
0.62
-
-
5.3
6.2
5.0
6.2
27
33
78
95
0.4
50
0.2
65
0.4
30
0.2
65
0.4
100
1
380
960
0.4
200
1.15
3
1100
1
相關PDF資料 |
PDF描述 |
|---|---|
| S1337-1010BQ | Si photodiode For UV to IR, precision photometry |
| S1337-1010BR | Si photodiode For UV to IR, precision photometry |
| S1337-16BR | Si photodiode For UV to IR, precision photometry |
| S1337-33BQ | Si photodiode For UV to IR, precision photometry |
| S1337-33BR | Si photodiode For UV to IR, precision photometry |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S1337-1010BQ | 制造商:MISCELLANEOUS 功能描述: |
| S1337-1010BR | 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM |
| S1337-16BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-16BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
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