參數(shù)資料
型號: S16LCC24-8
廠商: SENSITRON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
封裝: SO-16
文件頁數(shù): 2/3頁
文件大?。?/td> 87K
代理商: S16LCC24-8
S16LCC03-8
thru
S16LCC24-8
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1919, REV. -
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
Page 2
ELECTRICAL CHARACTERISTICS @ 25
°C
Part Number
Stand-off
Voltage
Vwm
(v)
Max
Breakdown
Voltage
VBR
@1mA
(V)
Min
Clamping
Voltage
Vc
@ 1 A
(V)
Max
Leakage
Current
IR
@ Vwm
(
A)
Max
Capacitance
(f = 1MHz)
C
@ 0V
(pF)
Max
Temperature
Coefficient
of VBR
a(VBR)
mv/
°C
Max
S16LCC03-8
3.3
4
7
200
25
-5
S16LCC05-8
5.0
6
9.8
20
25
1
S16LCC12-8
12.0
13.3
19
1
25
8
S16LCC15-8
15.0
16.7
24
1
25
11
S16LCC24-8
24.0
26.7
43
1
25
28
PACKAGE OUTLINES & DEMENSIONS
INCHES
MILLIMETERS
DIM
MIN.
MAX
MIN.
MAX.
A
0.358
0.398
9.09
10.10
B
0.150
0.157
3.8
4.0
C
0.053
0.069
1.35
1.75
D
0.011
0.021
0.28
0.53
F
0.016
0.050
0.41
1.27
G
0.050 BSC
1.27 BSC
J
0.006
0.010
0.15
0.25
K
0.004
0.008
0.10
0.20
L
0.189
0.206
4.80
5.23
P
0.228
0.244
5.79
6.19
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (
s)
Percent
of
I
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8
s
td = 20
s
Figure 1. Peak Pulse Power Vs Pulse Time (
s)
Figure 2. Pulse Wave Form
Time (
s)
10000
1000
100
10
.1
1
10
100
1000
10000
8/20s 300W Pulse
相關(guān)PDF資料
PDF描述
S1A 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
S1K 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
S1BB-13 1 A, 100 V, SILICON, SIGNAL DIODE
S1GB-13 1 A, 400 V, SILICON, SIGNAL DIODE
S1DB-13 1 A, 200 V, SILICON, SIGNAL DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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