參數(shù)資料
型號(hào)： S1787-08
廠商： Hamamatsu Photonics
英文描述： Si photodiode Plastic package photodiode with low dark current
中文描述： 硅光電二極管塑料包裝光電二極管暗電流低
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 145K
代理商： S1787-08
Si photodiode
S1787 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.:
19
, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KSPD1038E01
Apr. 2001 DN
ACTIVE AREA
2.8
×
2.4
PHOTOSENSITIVE
SURFACE
(8.5)
8.0
4.5
7.8
6
0
3
1
0
1
2
+
0
-
0
+
0
-
0
+
0
-
0.1
+
0
-
0.1
+
0.2
-
0.5
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
P
(Typ. Ta=25 C)
0.5
0.6
S1787-04
S1787-12
S1787-08
10 ns
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
10
2
10
3
10
4
10
5
LOAD RESISTANCE (
)
R
(Typ. Ta=25
C, V
R
=0 V)
S1787-12
S1787-04/-08
10 fA
100 fA
1 pA
10 pA
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
D
(Typ. Ta=25
C)
S1787-12
S1787-04/-08
100 k
1 M
10 M
100 M
1 G
10 T
-
20
0
20
40
60
AMBIENT TEMPERATURE (
C)
S
80
10 G
100 G
1 T
S1787-04/-08
S1787-12
(Typ. V
R
=10 mV)
KSPDA0056EA
I
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.15)
KSPDB0124EA
KSPDB0125EA
KSPDB0126EA
I
Spectral response
I
Dark current vs. reverse voltage
I
Rise time vs. load resistance
I
Shunt resistance temperature characteristics
KSPDB0127EA
10
-
16
10
-
14
10
-
12
10
-
10
10
-
8
10
0
10
-
8
10
-
6
10
-
4
10
-
2
10
0
INCIDENT LIGHT LEVEL (
lx
)
O
(Typ. Ta=25
C,
“
A
”
light source fully illuminated)
10
2
10
4
10
6
10
8
10
-
6
10
-
4
10
-
2
S1787-08
S1787-04
S1787-12
I
Short circuit current linearity
KSPDB0128EA
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