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參數(shù)資料
| 型號： | S1J-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 344K |
| 代理商： | S1J-E3 |
S1A thru S1M
Document Number 88711
06-Sep-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
40 A, 30 A
IR
1.0 A, 5.0 A
VF
1.1 V
Tj max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (see fig.1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1A-E3 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1K | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1D-HE3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1J-7-F | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S1MB-7-F | 1 A, 1000 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1J-E3/11T | 功能描述:整流器 1.0 Amp 600 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1J-E3/13T | 功能描述:整流器 1.0 Amp 600 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1J-E3/1T | 功能描述:整流器 1.0 Amp 600 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1J-E3/2GT | 功能描述:整流器 1.0 Amp 600 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1J-E3/51T | 功能描述:整流器 1.0 Amp 600 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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