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參數(shù)資料
| 型號(hào)： | S1M |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | S1M |
S1A thru S1M
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
All Dimensions in millimeter
SMA
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
2.92
2.29
1.27
1.63
0.31
0.15
4.83
5.59
0.05
0.20
1.96
2.40
0.76
1.52
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Lead and Case.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 ℃
@TJ =25 ℃
Typical Junction Capacitance (Note1)
1.0
30
1.1
5.0
100
10
Typical Thermal Resistance (Note 2)
/W
℃
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
@TL = 100℃
@TC = 100℃
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
S1A
S1M
S1K
S1J
S1G
S1D
S1B
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 9, Jan-2011, KSDA01
30
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
℃
B
A
C
H
E
F
G
D
SMA
R0JL
R0JC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1B | 1 A, 100 V, SILICON, SIGNAL DIODE |
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE |
| S1K | 1 A, 800 V, SILICON, SIGNAL DIODE |
| S1X | 1 A, 1800 V, SILICON, SIGNAL DIODE, DO-214AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1M R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 1KV 1A 2-Pin SMA T/R |
| S1M | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SMD 1.0A 1000V |
| S1M/1 | 功能描述:DIODE 1A 1000V SMA RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| S1M/11T | 功能描述:整流器 1.0 Amp 1000 Volt 30A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1M/13T | 功能描述:整流器 1.0 Amp 1000 Volt 30A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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