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參數資料
| 型號： | S2010FS31 |
| 英文描述： | Sensitive SCRs |
| 中文描述： | 敏感可控硅 |
| 文件頁數： | 10/12頁 |
| 文件大小： | 198K |
| 代理商： | S2010FS31 |
Sensitive SCRs
Data Sheets
http://www.teccor.com
+1 972-580-7777
E5 - 10
2002 Teccor Electronics
Thyristor Product Catalog
Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current
Figure E5.18 Normalized DC Latching Current versus Case Temperature
Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and
Current Measurement
Note: V1 — 0 V to 10 V dc meter
V
GT
— 0 V to 1 V dc meter
I
G
— 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
To measure gate trigger voltage and current, raise gate voltage
(V
GT
) until meter reading V1 drops from 6 V to 1 V. Gate trigger
voltage is the reading on V
GT
just prior to V1 dropping. Gate trig-
ger current I
GT
can be computed from the relationship
where I
G
is reading (in amperes) on meter just prior to V1 drop-
ping.
Note: I
GT
may turn out to be a negative quantity (trigger current
flows out from gate lead).
0
2
4
6
8
10
0
2
4
6
8
10
12
RMS On-state Current [I
T(RMS)
] – Amps
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
A
P
D
]
6 A to 10 A
TO-220, TO-202,
TO-251, and TO-252
-65
-15
+25
+65
+110 +125
-40
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Case Temperature (TC) – C
R
I
I
See General Notes for specific device
operating temperature range.
V1
6 V
DC
+
–
100
D.U.T.
Reset
Normally-closed
Pushbutton
1 k
(1%)
I
G
V
GT
100
I
GT
R1
IN4001
IGT
IG
V
1000
------------
Amps
–
=
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