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參數資料
| 型號： | S2383-10 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si APD Low bias operation, for 800 nm band |
| 中文描述： | 泗APD的低偏壓運作，為800納米帶 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 152K |
| 代理商： | S2383-10 |
Si APD
S2381 to S2385, S5139, S8611, S3884
2.54 ± 0.2
CASE
1.2 MAX.
1
4
2
0.45
LEAD
4.65 ± 0.1
5.4 ± 0.2
2
KAPDA0010EA
I
Dimensional outlines (unit: mm)
KAPDA0018EA
1
2
3
0.45
LEAD
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CASE
PHOTOSENSITIVE
SURFACE
WINDOW
2.0 MIN.
1.2 MAX.
0
0
3
4.65 ± 0.1
5.4 ± 0.2
PHOTOSENSITIVE
SURFACE
2
1.5 LENS
1
0.45
LEAD
2.54 ± 0.2
CASE
1.2 MAX.
0
KAPDA0031EA
KAPDA0012EA
KAPDA0013ED
(
4
2
0.45
LEAD
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.08 ± 0.2
CASE
WINDOW
0
1.5 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
INDEX MARK
1.4
(
4
3
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
CASE
0
1.0 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
S2381, S2382, S2383/-10
S5139
S8611
S2384
S2385
3
KAPDA0011EB
(
4
2
PHOTOSENSITIVE
SURFACE
5.08 ± 0.2
CASE
0
1.5 MAX.
0.45
LEAD
WINDOW
3.0 MIN.
9.
1
± 0.2
8.2 ± 0.1
S3884
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PDF描述 |
|---|---|
| S2384 | Si APD Low bias operation, for 800 nm band |
| S2385 | Si APD Low bias operation, for 800 nm band |
| S2551 | Si photodiode For visible to infrared precision photometry |
| S2592 | Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| S2384 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2385 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2386 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-18K | 制造商:MISCELLANEOUS 功能描述: |
| S2386-18L | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
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