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參數(shù)資料
| 型號(hào)： | S2384 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si APD Low bias operation, for 800 nm band |
| 中文描述： | 泗APD的低偏壓運(yùn)作，為800納米帶 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | S2384 |
Si APD
S2381 to S2385, S5139, S8611, S3884
I
Spectral response
I
Quantum efficiency vs. wavelength
I
Dark current vs. reverse voltage
I
Gain vs. reverse voltage
KAPDB0020EB
KAPDB0021EA
KAPDB0016EC
KAPDB0017EC
WAVELENGTH (nm)
P
(Typ. Ta
=
25 C,
λ
=800 nm)
200
400
600
800
1000
40
20
0
50
30
10
M
=
100
M
=
50
WAVELENGTH (nm)
Q
60
200
400
600
800
1000
40
20
0
80
100
(Typ. Ta=25
C
)
(Typ. Ta
=
25
C)
S2384
S3884
S2382, S5139,
S8611
S2381
S2383/
-
10
REVERSE VOLTAGE
(V)
D
0
50
100
150
200
1 pA
100 pA
1 nA
10 nA
10 pA
80
120
100
140
160
180
1
10
100
1000
10000
REVERSE VOLTAGE
(V)
G
(
Typ.
λ
=800 nm)
-20
C
0
C
20
C
40
C
60
C
I
Terminal capacitance vs. reverse voltage
I
Excess noise factor vs. gain
(Typ. Ta
=
25
C, f
=
1 MHz)
S2384
S2385
S3884
S2383/
-
10
S2382
S5139, S8611
S2381
REVERSE VOLTAGE
(V)
T
10 pF
100 pF
1 nF
50
100
1 pF
200
0
150
GAIN
E
1
10
1
10
(Typ. Ta
=
25
C, f
=
10 kHz, B
=
1 Hz)
100
M
0.5
λ
=
650 nm
M
0.3
λ
=
800 nm
M
0.2
KAPDB0018EC
KAPDB0022EA
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2385 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
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| S2386-18K | 制造商:MISCELLANEOUS 功能描述: |
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| S2386-44K | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
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