參數(shù)資料
型號(hào)： S25FL004D0LNAI013
廠商： Spansion Inc.
英文描述： 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
中文描述： 4兆位的CMOS閃存3.0伏，50赫茲的SPI總線接口
文件頁(yè)數(shù)： 10/36頁(yè)
文件大?。?/td> 724K
代理商： S25FL004D0LNAI013
18
S25FL Family (Serial Peripheral Interface) S25FL004D
S25FL004D_00A0 June 28, 2004
Ad va n c e
In f o rm a t i o n
or by driving Write Protect (W#) Low after setting the Status Register Write
Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull
Write Protect (W#) High.
If Write Protect (W#) is permanently tied High, the Hardware Protected Mode
(HPM) can never be activated, and only the Software Protected Mode (SPM),
using the Block Protect (BP2, BP1, BP0) bits of the Status Register, can be used.
Read Data Bytes (READ)
The READ instruction reads the memory at the specified SCK frequency (fSCK)
with a maximum speed of 33 MHz.
The device is first selected by driving Chip Select (CS#) Low. The instruction code
for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-
A0), each bit being latched-in during the rising edge of Serial Clock (SCK). Then
the memory contents, at that address, are shifted out on Serial Data Output
(SO), each bit being shifted out, at a frequency fSCK, during the falling edge of
Serial Clock (SCK).
The instruction sequence is shown in Figure 9. The first byte addressed can be at
any location. The address is automatically incremented to the next higher ad-
dress after each byte of data is shifted out. The whole memory can, therefore, be
read with a single Read Data Bytes (READ) instruction. When the highest address
is reached, the address counter rolls over to 00000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output.
Any Read Data Bytes (READ) instruction, while a Program, Erase, or Write cycle
is in progress, is rejected without having any effect on the cycle that is in
progress.
Figure 9. Read Data Bytes (READ) Instruction Sequence
Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction reads the memory at the specified SCK frequency
(fSCK) with a maximum speed of 50 MHz. The device is first selected by driving
Chip Select (CS#) Low. The instruction code for (FAST_READ) instruction is fol-
lowed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-
in during the rising edge of Serial Clock (SCK). Then the memory contents, at that
Instruction
24-Bit Address
High Impedance
MSB
Data Out 1
Data Out 2
0
31 32 33 34 35 36 37 38 39
30
23
28
10
9
8
7
6
5
4
3
2
1
7 6 5
23 22 21
4
3 2
1 0
3
2
1 0 7
SO
SI
SCK
CS#
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S25FL004D0LNFI011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004K0XMFI010 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S25FL004K0XMFI011 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S25FL004K0XMFI013 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 4MBIT - Bulk
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