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Si photodiode
S2684-254
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KSPD1014E03
Aug. 2006 DN
0.45
LEAD
20
9.6
±
0.2
2.6
±
0.2
9.1 ± 0.2
5.08 ± 0.25
CASE
0.4
MAX.
8.3 ± 0.1
WINDOW
6.1 ± 0.1
3.6
PHOTOSENSITIVE
SURFACE
s Dimensional outline (unit: mm)
s Spectral response (S2684-254, etc.)
KSPDB0135EB
KSPDA0081EB
200
300
400
500
WAVELENGTH (nm)
PHO
T
O
SENSITIVITY
(A/W)
600
700
800
(Typ. Ta=25 C)
0.2
0.15
0.1
0.05
0
S2684-340
(
λp=340 nm)
S2684-405
(
λp=405 nm)
S2684-500
(
λp=500 nm)
S2684-520
(
λp=520 nm)
S2684-650
(
λp=650 nm)
S2684-700
(
λp=700 nm)
S2684-560
(
λp=560 nm)
S2684-254
(
λp=254 nm)
Note) Made to order other than S2684-254.
2