Si PIN photodiode
S2744/S3588-08, -09
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. 2010 Hamamatsu Photonics K.K.
s
s Dimensional outlines (unit: mm)
S2744-08/-09
S3588-08/-09
10 nA
1 A
1 pA
100 pA
1 nA
100 nA
10 pA
DARK
CURRENT
(Typ. VR=70 V)
AMBIENT TEMPERATURE (C)
-20
60
80
020
40
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
10 pF
0.1
1
10
100
100 pF
1 nF
10 nF
(Typ. Ta=25 C, f=1 MHz)
S2744-08/-09
S3588-08/-09
0
TEMPERATURE
COEFFICIENT
(
%
/
C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1000
1200
0.6
0.7
(Typ. Ta=25 C)
S2744/S3588-08
S2744/S3588-09
KPINA0039EB
KPINA0042EB
s Spectral response
KPINB0265EB
KPINB0093EC
sDark current vs. ambient temperature
sPhotosensitivitytemperaturecharacteristic
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
1 pA
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25 C)
Cat. No. KPIN1049E05
Mar. 2010 DN
KPINB0220EA
KPINB0221EA
KPINB0222EB
+
0 -0.4
+0
-0.6
0.45
LEAD
PHOTOSENSITIVE
SURFACE
5.0
±
0.2
2.5
10
2.0
±
0.2
0.5
10.0
20.0
WHITE CERAMIC
2.0
14.2
27.0
ACTIVE AREA
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
0.45
LEAD
3.0
30.0
1.2
5.8
34.0
10
1.52
±
0.2
WHITE CERAMIC
0.45
2.5
±
0.2
1.1
+
0
-0.4
+0
- 0.8
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.