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參數資料
| 型號： | S29AL008D90MAN012 |
| 廠商： | Spansion Inc. |
| 英文描述： | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 150pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存 |
| 文件頁數： | 34/55頁 |
| 文件大?。?/td> | 1723K |
| 代理商： | S29AL008D90MAN012 |
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S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
The Erase Suspend feature enables the user to put erase on hold for any period
of time to read data from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the
internal state machine to reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also reset the device, enabling
the system microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses are stable for a
specified amount of time, the device enters the automatic sleep mode. The
system can also place the device into the standby mode. Power consumption is
greatly reduced in both these modes.
Spansion’s Flash technology combines years of Flash memory manufacturing ex-
perience to produce the highest levels of quality, reliability and cost
effectiveness. The device electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is programmed using hot
electron injection.
相關PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90MFNR21 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFNR22 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFNR23 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI012 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI021 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1.8pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29AL008D90MAN013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAN020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAN021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAN022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MAN023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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