參數(shù)資料
型號： S29AL008D90MAN020
廠商： SPANSION LLC
元件分類： PROM
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
封裝： MO-180AAA, SOP-44
文件頁數(shù)： 20/52頁
文件大?。?/td> 2004K
代理商： S29AL008D90MAN020
February 27, 2009 S29AL008D_00_A11
S29AL008D
27
Data
She e t
9.
Write Operation Status
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 9.1 on page 31 and the following subsections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or
in progress. These three bits are discussed first.
9.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 s, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7.
This is analogous to the complement/true datum output described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. The
system must provide an address within any of the sectors selected for erasure to read valid status information
on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 s, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
When the system detects DQ7 changes from the complement to true data, it can read valid data at DQ7–DQ0
on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while Output
on page 41, illustrates this.
Table 9.1 on page 31 shows the outputs for Data# Polling on DQ7. Figure 9.1 on page 28 shows the Data#
Polling algorithm.
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S29AL008D90MAN021 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAI013 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAI020 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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S29AL008D90TAN010 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
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S29AL008D90MAN021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MAN022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MAN023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MANR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MANR11 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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