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參數(shù)資料
| 型號： | S29AL008D90TAI012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 26/55頁 |
| 文件大小： | 1723K |
| 代理商： | S29AL008D90TAI012 |
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S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
additional sector erase commands. To ensure the command is accepted, the sys-
tem software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high on the second status check,
the last command might not be accepted. Table 6 shows the outputs for DQ3.
Notes:
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits.
See DQ5: Exceeded Timing Limits, on page 30 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
Table 6. Write Operation Status
Operation
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
RY/BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90TAI021 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1.8pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D90TAI022 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR10 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 20pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D90TAIR12 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL008D90TAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI020 | 制造商:Spansion 功能描述:SPZS29AL008D90TAI020 8M FLASH EOL100409 |
| S29AL008D90TAI021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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