參數(shù)資料
型號(hào)： S29AL008D90TAI022
廠商： Spansion Inc.
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 46/55頁(yè)
文件大?。?/td> 1723K
代理商： S29AL008D90TAI022
50
S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 5, on page 25 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Table 13. Latchup Characteristics
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Table 14. TSOP, SO, and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP, SO
6
7.5
pF
BGA
4.2
5.0
COUT
Output Capacitance
VOUT = 0
TSOP, SO
8.5
12
BGA
5.4
6.5
CIN2
Control Pin Capacitance
VIN = 0
TSOP, SO
7.5
9
BGA
3.9
4.7
相關(guān)PDF資料
PDF描述
S29AL008D90TAIR10 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR11 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 20pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
S29AL008D90TAIR12 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR13 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR20 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 2.0pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL008D90TAI023 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR10 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 90NS 48TSOP - Trays
S29AL008D90TAIR11 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR12 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90TAIR13 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*