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參數(shù)資料
| 型號： | S29AL008D90TAIR22 |
| 廠商： | Spansion Inc. |
| 英文描述： | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 19/55頁 |
| 文件大小： | 1723K |
| 代理商： | S29AL008D90TAIR22 |
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26
S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
Legend:
X = Don’t care, RA = Address of the memory location to be read, RD = Data read from location RA during read operation, and
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever
happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18–A12 uniquely select any
sector.
Notes:
1. See Table 1, on page 11 for a description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
5. Address bits A18–A11 are don’t cares for unlock and command cycles, unless PA or SA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5
goes high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See Autoselect Command Sequence, on
page 20 for more information.
10.The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11.The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock
bypass mode.
12.The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a sector erase operation.
13.The Erase Resume command is valid only during the Erase Suspend mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90TAIR23 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D55MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D55MFN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL008D90TAIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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