參數(shù)資料
型號： S29AL032D90TFI042
廠商： Spansion Inc.
英文描述： 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述： 32兆位的CMOS 3.0伏只閃存
文件頁數(shù)： 61/69頁
文件大?。?/td> 1970K
代理商： S29AL032D90TFI042
62
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, VCC = 3.0 V, 100,000 cycles, checkerboard
data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 17 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
45
s
Byte Programming Time
9
300
s
Excludes system level
overhead (Note 5)
Word Programming Time
11
360
s
Accelerated Byte/Word Programming
Time
7
210
s
Chip Programming Time
Byte Mode
36
108
s
Word Mode
24
72
s
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
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