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  • 參數(shù)資料
    型號(hào): S29GL064N90TAI070
    廠商: SPANSION LLC
    元件分類: DRAM
    英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
    封裝: MO-142EC, TSOP-48
    文件頁數(shù): 58/79頁
    文件大?。?/td> 2191K
    代理商: S29GL064N90TAI070
    58
    S29GL-N MirrorBit
    Flash Family
    S29GL-N_01_09 November 16, 2007
    D a t a
    S h e e t
    Figure 10.6
    Toggle Bit Algorithm
    Note
    The system should recheck the toggle bit even if DQ5 =
    1
    because the toggle bit may stop toggling as DQ5 changes to
    1
    . See the
    subsections on DQ6 and DQ2 for more information.
    10.14 DQ2: Toggle Bit II
    The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
    is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
    valid after the rising edge of the final WE# pulse in the command sequence.
    DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The
    system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the
    sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is
    actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
    both status bits are required for sector and mode information. Refer to
    Table 10.5 on page 60
    to compare
    outputs for DQ2 and DQ6.
    S
    TART
    No
    Ye
    s
    Ye
    s
    DQ5 = 1
    No
    Ye
    s
    Toggle Bit
    = Toggle
    No
    Progr
    a
    m/Er
    as
    e
    Oper
    a
    tion Not
    Complete, Write
    Re
    s
    et Comm
    a
    nd
    Progr
    a
    m/Er
    as
    e
    Oper
    a
    tion Complete
    Re
    a
    d DQ7–DQ0
    Toggle Bit
    = Toggle
    Re
    a
    d DQ7–DQ0
    Twice
    Re
    a
    d DQ7–DQ0
    相關(guān)PDF資料
    PDF描述
    S29GL064N90TAI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N90TAIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N90TAIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N90TAIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N90TAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S29GL064N90TFI010 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
    S29GL064N90TFI010 制造商:Spansion 功能描述:MirrorBit Flash Memory
    S29GL064N90TFI013 制造商:Spansion 功能描述:64 MEGABIT3.0-VOLT ONLY PAGE MODE FLASH MEMORY - Tape and Reel
    S29GL064N90TFI02 制造商:Spansion 功能描述:
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