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參數(shù)資料
| 型號(hào)： | S29PL129N |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫(xiě)，頁(yè)模式閃存 |
| 文件頁(yè)數(shù)： | 37/74頁(yè) |
| 文件大?。?/td> | 1968K |
| 代理商： | S29PL129N |
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June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
37
D a t a
S h e e t
( P r e l i m i n a r y )
7.4.9
Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The following
subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
DQ7: Data# Polling.
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last
word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling
status on any word other than the last word to be programmed in the write-buffer-page returns false status
information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# polling on DQ7 is active for approximately t
PSP
, then that bank returns to the read
mode.
During the Embedded Erase Algorithm, Data# polling produces a
0
on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a
1
on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately t
ASP
, then the bank returns to the read mode. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors
that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may
not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 can change asynchronously
with DQ6 – DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ6 – DQ0 may be still invalid. Valid data on DQ7 – DQ0 appears on successive
read cycles.
See the following for more information:
Table 7.18,
Write Operation Status
on page 40
, shows the outputs for
Data# Polling on DQ7.
Figure 7.4,
Write Operation Status Flowchart
on page 38
, shows the Data# Polling
algorithm.
Figure 11.13,
Data# Polling Timings (During Embedded Algorithms)
on page 64
shows the Data#
Polling timing diagram.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N65GAW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65GAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65GFW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N65FAI000 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAI002 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAI003 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAIW00 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAIW02 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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