參數(shù)資料
型號: S2M
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
封裝: PLASTIC, SMB, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 337K
代理商: S2M
www.vishay.com
2
Document Number 88712
15-Aug-05
S2A thru S2M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Unit
Maximum instantaneous
forward voltage
at 1.5 A
VF
1.15
V
Maximum DC reverse
current at Rated DC
blocking voltage
TA= 25 °C
TA= 125 °C
IR
1.0
125
A
Typical reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
16
pF
Parameter
Symbol
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Unit
Typical thermal resistance (1)
RθJA
RθJL
53
16
°C/W
Figure 1. Forward Current Derating Curve
Lead Temperature (°C)
A
v
erage
F
or
w
ard
C
u
rrent
(A)
1.5
50
60
70
80
90
100 110 120 130 140 150
0
0.5
1.0
Resistive or Inductive Load
60 Hz Resistive or
Inductive Load
P.C.B. Mounted
0.27 x 0.27” (7.0 x 7.0 mm)
Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
0
10
30
40
50
1
10
100
20
TL = 100 °C
8.3 ms Single Half Sine-Wave
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