參數(shù)資料
型號(hào): S2N1
英文描述: SCRs
中文描述: 可控硅
文件頁數(shù): 11/12頁
文件大小: 222K
代理商: S2N1
Data Sheets
SCRs
2002 Teccor Electronics
Thyristor Product Catalog
E6 - 11
http://www.teccor.com
+1 972-580-7777
Figure E6.23 Peak Surge Current versus Surge Current Duration
Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current
(1 A)
Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current
(6 A through 20 A)
8
6
1
2
3
4
5
1000
800
10
20
30
40
50
60
80
100
200
300
400
500
600
1
2
3
5
4
6 78 10
20
30 40 60 80100
200 300400 600
1000
Surge Current Duration – Full Cycles
70 A Devices
55 A Devices
65 A TO-218
25 A Devices
16 A Devices
35 A Devices
20 A Devices
15 A Devices
12 A Devices
8 A Devices
6 A Devices
10 A Devices
1 A Devices
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: [IT(RMS)]: Max-
Rated Value at Specified Case Temperature
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
P
40 A Devices
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.0
0.2
RMS On-state Current [I
T(RMS)
] – Amps
A
D
D
]
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
1.0 A Devices
1.0
0.6
0
4
8
12
16
0
RMS On-state Current [I
T(RMS)
] – Amps
A
P
D
]
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
2
6
10
14
18
2
4
6
8
10
12
14
16
18
20
15 A to 20 A Devices
12 A Devices
6 A to 10 A Devices
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