![](http://datasheet.mmic.net.cn/300000/S3588-08_datasheet_16208954/S3588-08_2.png)
Si PIN photodiode
S2744/S3588-08, -09
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
I
Dimensional outlines (unit: mm)
S2744-08/-09
S3588-08/-09
10 nA
1
μ
A
1 pA
100 pA
1 nA
100 nA
10 pA
D
(Typ. V
R
=70 V)
AMBIENT TEMPERATURE (C)
-20
60
80
0
20
40
REVERSE VOLTAGE (V)
T
10 pF
0.1
1
10
100
100 pF
1 nF
10 nF
(Typ. Ta=25
C, f=1 MHz)
S2744-08/-09
S3588-08/-09
0
T
%
/
C
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
WAVELENGTH (nm)
P
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1000
1200
0.6
0.7
(Typ. Ta=25
C)
S2744/S3588-08
S2744/S3588-09
KPINA0039EB
KPINA0042EB
I
Spectral response
KPINB0265EB
KPINB0093EC
I
Dark current vs. ambient temperature
I
Photo sensitivity temperature characteristic
I
Dark current vs. reverse voltage
I
Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
D
1 pA0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25
C)
Cat. No. KPIN1049E04
Mar
. 200
6
DN
KPINB0220EA
KPINB0221EA
KPINB0222EB
+
0
-
0
1
+
0
-
0.6
L0.45
PHOTOSENSITIVE
SURFACE
5
2.5
1
2
0
1
20.0
WHITE CERAMIC
2.0
27.0
ACTIVE AREA
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
L0.45
3
30.0
1.2
5
34.0
1
1
WHITE CERAMIC
0
2
1.1
+
0
-
0
+
0
-
0.8
The coating resin may extend a
upper surface of the package.