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參數(shù)資料
| 型號： | S3924-512Q |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit |
| 中文描述： | NMOS管線性圖像傳感器電壓輸出型電流集成讀出電路和阻抗轉(zhuǎn)換電路 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 244K |
| 代理商： | S3924-512Q |
NMOS linear image sensor
S3921/S3924 series
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Construction of image sensor
The NMOS image sensor consists of a scanning circuit made
up of MOS transistors, a photodiode array, and a switching
transistor array that addresses each photodiode, all integrated
onto a monolithic silicon chip. Figure 1 shows the circuit of a
NMOS linear image sensor.
The MOS scanning circuit operates at low power consump-
tion and generates a scanning pulse train by using a start
pulse and 2-phase clock pulses in order to turn on each ad-
dress sequentially. Each address switch is comprised of an
NMOS transistor using the photodiode as the source, the
video line as the drain and the scanning pulse input section
as the gate.
The photodiode array operates in charge integration mode
so that the output is proportional to the amount of light expo-
sure (light intensity × integration time).
Each cell consists of an active photodiode and a dummy
diode, which are respectively connected to the active video
line and the dummy video line via a switching transistor. Each
of the active photodiodes is also connected to the saturation
control drain via the saturation control gate, so that the photo-
diode blooming can be suppressed by grounding the satura-
tion control gate. Applying a pulse signal to the saturation
control gate triggers all reset. (See “Auxiliary functions”.)
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EXPOSURE (
lx ·
s)
(Typ. Reset V=2.5 V, Vdd=5.0 V, V =5 V, light source: 2856 K)
SATURATION EXPOSURE
S3921-512Q
S3921-128Q
S3921-256Q
SATURATION VOLTAGE
0.3
0.2
0.1
0200
400
600
800
1000
1200
WAVELENGTH (nm)
P
(Ta=25 C)
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EXPOSURE (
lx
·
s)
S3924-1024Q
S3924-256Q
SATURATION VOLTAGE
(Typ. Reset V=2.5 V, Vdd=5.0 V, V =5 V, light source: 2856 K)
S3924-512Q
SATURATION EXPOSURE
KMPDB0149EA
KMPDB0118EA
KMPDB0119EA
Figure 5 Spectral response (typical example)
Figure 6 Output voltage vs. exposure
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S3921-1024Q | NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit |
| S3921-128Q | NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit |
| S3921-256Q | NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit |
| S3921-512Q | MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN |
| S3924-256Q | NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S3925 | 制造商:Hubbell Premise Wiring 功能描述:Cable Accessories Cover Brass 制造商:Hubbell Wiring Device-Kellems 功能描述:F-BOX CVR, RND, DUP FLAP, BRS |
| S392D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Diode |
| S392D_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:RF PIN Diode - Dual in SOT-23 |
| S392D-GS08 | 功能描述:PIN 二極管 30 Volt 50mA 4uS RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| S392D-GS18 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:RF PIN Diode - Dual in SOT-23 |
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