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參數(shù)資料
| 型號(hào)： | S3954 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | 76-element Si photodiode array High UV sensitivity photodiode array mounted in DIP |
| 中文描述： | 76元素硅光電二極管陣列紫外高靈敏度的光電二極管陣列采用DIP安裝 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | S3954 |
Features
l
High UV sensitivity: QE 75 % (
λ
=200 nm)
l
Half pitch 78-lead DIP
l
Element size: 3.175 × 0.3175 mm
l
Entire active area: 3.175 × 25.6875 mm
l
Element pitch: 0.3425 mm
Applications
l
Spectrophotometers
P H O T O D I O D E
76-element Si photodiode array
S3954
High UV sensitivity photodiode array mounted in DIP
I
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
5
-20 to +60
-20 to +80
Unit
V
°C
°C
I
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Spectral response range
Peak sensitivity wavelength
Symbol
λ
λ
p
Condition
Min.
-
-
-
-
-
Typ.
Max.
-
-
-
-
-
Unit
nm
nm
190 to 1100
960
0.10
0.43
0.58
λ
=200 nm
λ
=633 nm
λ
=
λ
p
per 1 element
V
R
=10 mV
Photo sensitivity
S
A/W
Dark current
I
D
-
0.1
30
pA
Temperature coefficient of
dark current
T
CID
-
1.12
-
times/°C
Rise time
tr
V
R
=0 V, R
L
=1 k
λ
=655 nm
per 1 element
V
R
=0 V, f=10 kHz
V
R
=0 V,
λ
=
λ
p
-
0.4
-
μs
Terminal capacitance
Ct
-
150
-
pF
Noise equivalent power
NEP
-
7.0 × 10
-16
-
W/Hz
1/2
1
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