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參數(shù)資料
| 型號： | S524LB0XB1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32K/64K-bit Serial EEPROM |
| 中文描述： | 32K/64K-bit串行EEPROM |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 145K |
| 代理商： | S524LB0XB1 |
S524LB0X91/B0XB1
32K/64K-bit
Serial EEPROM
Data Sheet
7-1
OVERVIEW
The S524LB0D91/B0DB1 serial EEPROM has a 32/64 Kbits (4,096/8,192 bytes) capacity, supporting the
standard I
2
C-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. One of
its major features is a hardware-based write protection circuit for the entire memory area. Hardware-based write
protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to
32 bytes of data into the EEPROM in a single write operation. Another significant feature of the
S524LB0D91/B0DB1 is its support for fast mode and standard mode.
FEATURES
I
2
C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
32/64 Kbits (4,096/8,192 bytes) storage area
32-byte page buffer
Typical 3-millisecond write cycle time with auto-
erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
Operating Characteristics
Operating voltage: 2.0 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 500
μ
A at 5.5 V
— Maximum stand-by current: < 2
μ
A at 2.0 V
Operating temperature range:
— – 25 °C to + 70 °C (Commercial)
— – 40 °C to + 85 °C (Industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP and SOP
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