參數(shù)資料
型號(hào): S8201
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 37K
代理商: S8201
S2A 1 DIE ID & GM Vs VG
0.10
1.00
10.00
0
2
4
6
Vgs in Volts
8
10
12
14
I
Id
gM
S2A 1 DIE CAPACITANCE
0.1
1
10
100
0
5
10
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
S 8201 P OUT VS P IN Freq= 1000MHz, VDS = 28V, Idq= .2A
0
1
2
3
4
5
6
0
0.2
0.4
P IN IN WAT T S
0.6
0.8
1
7.50
8.50
9.50
10.50
11.50
12.50
13.50
Pout
Gain
Efficiency = 45%
1dB compression = 4 watts
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
S8201
S2A 1 DIE IV
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
2
vg=2v
4
6
8
Vg=6v
10
12
14
16
18
20
VDS IN VOLTS
I
Vg=4v
vg=8v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
相關(guān)PDF資料
PDF描述
S8202 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SA120C 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
SA170C 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
SA120CA 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
SA170CA 500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
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