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參數(shù)資料
| 型號： | S8380-512Q |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| 中文描述： | NMOS管NMOS管線性圖像傳感器具有高靈敏度紅外線性圖像傳感器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 152K |
| 代理商： | S8380-512Q |
S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image
sensors. The peak sensitivity wavelength is in the near IR region (
λ
p=750 nm).
The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 μm. The photodiodes of S8381 series also
have a height of 2.5 mm but are arrayed at a spacing of 25 μm. The photodiodes are available in 3 different pixel quantities for each series, 128
(S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard
window material.
Features
l
High sensitivity in the IR and soft X-ray regions
l
Wide active area
Pixel pitch: 50 μm (S8380 series)
25 μm (S8381 series)
Pixel height: 2.5 mm
l
High UV sensitivity with good stability
l
Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l
Excellent output linearity and sensitivity spatial uniformity
l
Lower power consumption: 1 mW Max.
l
Start pulse and clock pulses are CMOS logic compatible
Applications
l
Multichannel spectrophotometry
l
Image readout system
I M A G E S E N S O R
NMOS linear image sensor
S8380/S8381 series
NMOS linear image sensors with high IR sensitivity
2
1
1
4
OXIDATION SILICON
N TYPE SILICON
P TYPE SILICON
S8380 SERIES: a=50 μm, b=45 μm
S8381 SERIES: a=25 μm, b=20 μm
b
a
KMPDC0020EA
Figure 1 Equivalent circuit
Vss
START
st
CLOCK
CLOCK
1
2
ACTIVE
PHOTODIODE
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
DUMMY VIDEO
ACTIVE VIDEO
END OF SCAN
DIGITAL SHIFT RE
G
ISTER
(MOS SHIFT RE
G
ISTER)
Figure 2 Active area structure
KMPDA0125EA
I
Absolute maximum ratings
Parameter
Input pulse (
φ
1,
φ
2,
φ
st) voltage
Power consumption *
1
Operating temperature *
2
Storage temperature
*1: V
φ
=5.0 V
*2: No condensation
Symbol
V
φ
P
Topr
Tstg
Value
15
1
-40 to +65
-40 to +85
Unit
V
mW
°C
°C
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8381-1024Q | NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8381-256Q | NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8381-512Q | NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8382 | NMOS multichannel detector head |
| S8382-256S | NMOS multichannel detector head |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S8381 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensors with high IR sensitivity |
| S8381-1024Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8381-256Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8381-512Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS linear image sensor NMOS linear image sensors with high IR sensitivity |
| S8382 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:NMOS multichannel detector head |
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