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參數(shù)資料
| 型號(hào)： | S8650 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Flat surface ideal for bonding to scintillator |
| 中文描述： | 硅PIN光電二極管的閃爍體粘接平面理想 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 88K |
| 代理商： | S8650 |
S8650
Flat surface ideal for bonding to scintillator
S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 μm). When bonded to a scintillator, the flat
surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between.
We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.
Features
l
Flat epoxy coating surface ideal for bonding to scintillator
Flatness: ±5 μm
l
Active area: 10 × 10 mm
(Other sizes are also available on request.)
Applications
l
Scintillation X-ray detectors
l
Calorimeters, etc.
P H O T O D I O D E
Si PIN photodiode
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
100
-20 to +60
-20 to +80
Unit
V
°
C
°
C
I
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Spectral response range
Peak sensitivity wavelength
Symbol
λ
λ
p
Condition
Min.
-
-
-
-
-
-
Typ.
Max.
-
-
-
-
-
6
Unit
nm
nm
A/W
A/W
A/W
nA
320 to 1100
960
0.66
0.30
0.37
2
λ
=
λ
p
BGO:
λ
=480 nm
CsI (Tl):
λ
=540 nm
V
R
=70 V
λ
=780 nm, V
R
=70 V
R
L
=50
, -3 dB
V
R
=70 V, f=1 MHz
V
R
=70 V,
λ
=
λ
p
Photo sensitivity
S
Dark current
I
D
Cut-off frequency
fc
-
40
-
MHz
Terminal capacitance
Noise equivalent power
Ct
-
40
-
-
pF
NEP
3.8 × 10
-14
W/Hz
1/2
1
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