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C
B E
BACK
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9013M
TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High Collector Current. (I
C
=500mA)
Complementary to S9012M
Excellent h
FE
linearity.
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J3
C
J3
B E
MAXIMUM RATINGS
T
A
=25
unless otherwise noted
℃
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
C
Collector Dissipation
T
J
Junction Temperature
T
stg
Storage Temperature
Value
40
25
5
500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS(Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
Test conditions
I
C
= 100
μ
A
,
I
E
=0
I
C
=1mA
,
I
B
=0
I
E
=100
μ
A I
C
=0
V
CB
=40 V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
= 5V,I
C
=0
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=500mA
I
C
=500mA,I
B
= 50mA
I
C
=500mA,I
B
= 50mA
V
CE
=6V, I
C
= 20mA
f=
30MHz
V
CB
=6V,I
E
=0,f=
1
MHz
MIN
40
25
TYP
MAX
UNIT
V
V
V
μ
A
μ
A
μ
A
V
V
5
0.1
0.1
0.1
400
0.6
1.2
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
f
T
150
MHz
Collector output capacitance
C
ob
8
pF
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR