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參數(shù)資料
| 型號： | S9016LT1-SOT-23 |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR (NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 41K |
| 代理商： | S9016LT1-SOT-23 |
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JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9016LT1
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
200 mW (Tamb=25
℃
)
Collector current
I
CM:
0.025 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
μ
A, I
E
=0
30
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 0.1mA, I
B
=0
20
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 3V, I
C
=0
0.1
μ
A
DC current gain
H
FE(1)
V
CE
=5V, I
C
= 1mA
70
200
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=10mA, I
B
= 1mA
0.3
V
Transition frequency
f
T
V
CE
=5V, I
C
= 1mA
f=
100MHz
300
MHz
DEVICE MARKING
S9016LT1= Y6
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
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