參數(shù)資料
型號: S9226
廠商: Hamamatsu Photonics
英文描述: CMOS linear image sensor Built-in timing generator and signal processing circuit; single 3.3 V supply operation
中文描述: CMOS線性圖像傳感器內(nèi)置定時(shí)發(fā)生器和信號處理電路; 3.3 V單電源供電
文件頁數(shù): 2/4頁
文件大?。?/td> 110K
代理商: S9226
CMOS linear image sensor
S9226
2
I
Recommended terminal voltage
Parameter
Supply voltage
Gain selection
terminal voltage
Symbol
Vdd
Min.
3.3
-
Typ.
5
0
Vdd
Vdd
0
Vdd
0
Max.
5.25
-
Unit
V
V
V
V
V
V
V
High gain
Low gain
High
Low
High
Low
Vg
Vdd-0.25
Vdd-0.25
-
Vdd-0.25
-
Vdd+0.25
Vdd+0.25
-
Vdd+0.25
-
Clock pulse voltage
V (CLK)
Start pulse voltage
V (ST)
I
Electrical characteristics [Ta=25
°
C, Vdd=5 V, V (CLK)=V (ST)=5 V]
Parameter
Symbol
Clock pulse frequency
f (CLK)
Video data rate
Power consumption
Low gain
Conversion efficiency
High gain
Output impedance *
2
Min.
10
-
-
-
-
-
Typ.
-
Max.
800
-
30
-
-
-
Unit
kHz
kHz
mW
VR
P
f (CLK)/4
25
1.6
3.2
185
CE
μV/e
-
Zo
I
Electrical and optical characteristics [Ta=25
°
C, Vdd=5 V, V (CLK)=V (ST)=5 V]
Parameter
Symbol
Spectral response range
λ
Peak sensitivity wavelength
λ
p
Dark current
I
D
High gain
Dark output voltage *
3
Low gain
Saturation output voltage *
4
Vsat
High gain
Readout noise
Low gain
Offset output voltage
Vo
Photo response non-uniformity *
5
*
6
PRNU
*2: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current.
Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is
minimized.
Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier.
*3: Storage time Ts=100 ms
*4: Voltage difference with respect to Vo, Ts=10 ms
*5: Uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation
exposure level and using 1022 pixels excluding both ends pixels as follows:
PRNU=
X/X
×
100 (%)
Where X is the average output of all pixels and
X is the difference between X and maximum or minimum output and X.
*6: Measured with a tungsten lamp of 2856 K
Min.
Typ.
Max.
Unit
nm
nm
fA
400 to 1000
700
3
0.6
0.3
3
0.6
0.3
0.3
-
-
-
-
-
2
-
-
-
-5
-
30
6
3
-
2
1
0.6
+5
Vd
mV
V
Nr
mV rms
V
%
I
Spectral response (typical example)
KMPDB0229EC
WAVELENGTH (nm)
R
80
200
600
1000
300
400
800
700
500
900
1100
0
60
100
40
20
(Typ. Ta=25 C)
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