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參數(shù)資料
| 型號： | S9269 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Photodiode and preamp integrated with feedback resistance and capacitance |
| 中文描述： | 光電二極管和前置放大器的反饋電阻和電容集成 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 117K |
| 代理商： | S9269 |
P H O T O D I O D E
Si photodiode with preamp
S9269, S9270
Photodiode and preamp integrated with feedback resistance and capacitance
S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all
integrated into a ceramic package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide
range of photometric applications including analytical equipment and measurement equipment. The active area of the photodiode is
internally connected to the GND terminal making it highly resistant to EMC noise. Combinations with various photodiodes such as UV
sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity enhanced type are also available. (Custom order products)
Features
Applications
l
Si photodiode for visible to near IR Si precision photometry
l
Small package
S9269: 10.1 × 8.9 × 40
t
mm
S9270: 16.5 × 15.0 × 4.15
t
mm
l
Active area
S9269: 5.8 × 5.8 mm
S9270: 10 × 10 mm
l
FET input operational amplifier with low power dissipation
l
Built-in Rf=1 G
, Cf=5 pF
l
Low noise and NEP
l
Precision photometry
l
General-purpose optical measurement
1
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Supply voltage (op amp)
Power dissipation
Operating temperature
Storage temperature
Symbol
Vcc
P
Topr
Tstg
Value
±20
500
-20 to +60
-20 to +80
Unit
V
mW
°
C
°
C
I
Electrical and optical characteristics (Ta=25
°
C, Vcc=±15 V, R
L
=1 M
)
S9269
Typ.
320 to
1100
960
1
5
0.62
7.3
6.5
12
12
±4
32
13
0.3
S9270
Typ.
320 to
1100
960
1
5
0.62
9.7
9.1
16
17
±4
32
13
0.3
Parameter
Symbol
Condition
Min.
Max.
Min.
Max.
Unit
Spectral response range
λ
-
-
-
-
nm
Peak sensitivity wavelength
Feed back resistance (built-in) *
Feed back capacitance (built-in) *
Photo sensitivity
λ
p
Rf
Cf
S
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nm
G
pF
V/nW
λ
=
λ
p
Dark state, f=10 Hz
Dark state, f=20 Hz
λ
=
λ
p, f=10 Hz
λ
=
λ
p, f=20 Hz
Dark state
-3 dB
R
L
=10 k
Dark state
0.5
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
Output noise voltage
Vn
μVrms/Hz
1/2
Noise equivalent power
NEP
fW/Hz
1/2
Output offset voltage
Cut-off frequency
Output voltage swing
Supply current
* Custom devices available with different Rf, Cf, etc.
Vos
fc
Vo
Icc
mV
Hz
V
mA
0.6
0.6
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