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參數(shù)資料
| 型號(hào)： | S9723 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Large area Si PIN photodiode for direct detection |
| 中文描述： | 硅PIN光電二極管的大面積硅PIN光電二極管直接檢測 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 104K |
| 代理商： | S9723 |
S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays. These Si
detectors are mounted on PC boards with holes for the purpose of
E-E detection of charged particles. These detector’s thicknesses are 100 ± 5
μm (S9723) and 10 ± 2.5 μm (S9724). Thickness uniformities of the active area are as good as 2.0 μm Typ. (S9723) and 1.0 μm Typ. (S9724).
This ensures excellent sensitivity uniformity over the entire active area.
Features
l
Large area
l
Low dark current
l
Thickness uniformity *
1
: 2 μm (S9723)
1 μm (S9724)
l
Active area : 26 × 26 × 0.1
t
mm (S9723)
10 × 10 × 0.01
t
mm (S9724)
Applications
l
Heavy ions energy detection
l
X-ray detection
l
E-E detection
P H O T O D I O D E
Si PIN photodiode
S9723, S9724
Large area Si PIN photodiode for direct detection
PRELIMINARY DATA
Sep. 2004
1
I
Specifications/Absolute maximum ratings
Parameter
Active area
Detector thickness
Thickness uniformity *
1
Surface orientation
Front side
Dead layer
thickness *
2
Rear side
Reverse voltage
Current
Operating temperature *
3
Storage temperature *
3
*1: Variation in the detector thickness
*2: Reference value
*3: No condensation
Symbol
-
-
-
-
S9723
26 × 26
100 ± 5
2.0
S9724
10 × 10
10 ± 2.5
1.0
Unit
mm
μm
μm
-
(111)
1
1
-
μm
V
R
Max.
-
Topr
Tstg
20
2
V
2
mA
°C
°C
0 to +60
0 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S9723
Typ.
5
2
80
0.75
S9724
Typ.
0.5
0.01
100
1
Parameter
Symbol
Condition
Min.
-
-
-
-
Max.
10
50
-
-
Min.
-
-
-
-
Max.
1
0.1
-
-
Unit
Full depletion voltage
Dark current
Rise time
Terminal capacitance
V
D
I
D
tr
Ct
V
nA
ns
nF
V
R
=V
D
V
R
=V
D
, R
L
=50
V
R
=V
D
, f=1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S9724 | Si PIN photodiode Large area Si PIN photodiode for direct detection |
| S9736 | CCD area image sensor 512 】 512 pixels, front-illuminated FFT-CCDs |
| S9737-01 | CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs |
| S9737 | CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs |
| S9737-02 | Diode; Detector and mixer; VR (V): 2; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.15 0.27; Condition IF at VF (mA): 0.1 1; C (pF) max: 0.3typ; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: UFP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S9724 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si PIN photodiode Large area Si PIN photodiode for direct detection |
| S973 | 制造商:Datak Corporation 功能描述:Soldering AIDS, Helping Hand Double Clip Holder |
| S9736 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:CCD area image sensor 512 】 512 pixels, front-illuminated FFT-CCDs |
| S9737 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs |
| S9737-01 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs |
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