參數(shù)資料
型號: S9737
廠商: Hamamatsu Photonics
英文描述: CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs
中文描述: 防治荒漠化領(lǐng)域的圖像傳感器1024】1024像素,前照明的傅里葉變換的CCD
文件頁數(shù): 8/9頁
文件大?。?/td> 799K
代理商: S9737
CCD area image sensor
S9737 series
0
-100
-80
-60
-40
-20
0
20
40
R
)
1400
1200
1000
800
600
400
200
TEMPERATURE (
C)
(Typ. Ta=25
C)
KMPDB0107EA
V - I
CCD TEMPERATURE - I
0
1
2
3
V
C
C
4
5
6
-80
3.0
2.5
2.0
1.5
CURRENT (A)
1.0
0.5
0
-60
-40
-20
0
20
40
(Typ. Ta=25
C)
I
Specifications of built-in temperature sensors (S9737-02)
Parameter
Resistance at cool side
Temperature coefficient of resistance at cool side
Resistance at hot side
Temperature coefficient of resistance at hot side
Symbol
Rc
-
Rh
-
Condition
T=0 °C
-
T=0 °C
-
Min.
-
-
-
-
Typ.
1000
0.00375
1000
0.00385
Max.
-
-
-
-
Unit
/
/
KMPDB0108EA
I
Specifications of built-in TE-cooler (S9737-02)
Parameter
Internal resistance
Symbol
Rint
Condition
Min.
-
Typ.
1.6
Max.
-
Unit
Ta=27 °C
Th *
16
=27 °C
T *
17
=
Tmax
Th*
16
=27 °C
T=
Tmax
I=Imax
Tc *
19
=Th *
16
=27 °C
I=Imax
Maximum current *
15
Imax
-
-
4.4
A
Maximum voltage
Vmax
-
-
7.4
V
Maximum heat absorption *
18
Qmax
-
-
3.0
W
Maximum temperature at hot side
CCD temperature
*15: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation,
the supply current should be less than 60 % of this maximum current.
*16: Temperature at hot side of thermoelectric cooler.
*17:
T=Th - Tc
*18: This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooled element when the
maximum current is supplied to the unit.
*19: Temperature at cool side of thermoelectric cooler.
-
-
-
-
-
50
-50
°C
°C
Ta=25 °C
-70
8
相關(guān)PDF資料
PDF描述
S9737-02 Diode; Detector and mixer; VR (V): 2; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.15 0.27; Condition IF at VF (mA): 0.1 1; C (pF) max: 0.3typ; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: UFP
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