參數(shù)資料
型號(hào)： SA1620BE
廠商： NXP SEMICONDUCTORS
元件分類： 通信及網(wǎng)絡(luò)
英文描述： Low voltage GSM front-end transceiver
中文描述： SPECIALTY TELECOM CIRCUIT, PQFP48
文件頁數(shù)： 8/26頁
文件大?。?/td> 203K
代理商： SA1620BE
Philips Semiconductors
Product specification
SA1620
Low voltage GSM front-end transceiver
1997 May 22
8
AC ELECTRICAL CHARACTERISTICS
V
CCXX
= +3V, T
A
= 25
°
C; RF = 940MHZ; IF=400MHz, f
LO
=RF + IF; LO = –15dBm; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
1
TYP
UNITS
MIN
1
-3
σ
3
σ
MAX
1
Low Noise Amplifier LNA1
2
G1hi mode
9.4
10
10.6
S
21
Gain
G1hi mode, RF = 1800MHz
–2.5
dB
G1lo mode
–13
–12
–11
IP3
G1lo mode
28
S
21
/
T
Gain temperature sensitivity
G1hi mode
0.003
dB/
°
C
G1lo mode
0.0140
S
21
/
V
CCL1
S
21
/
f
S
12
S
11
S
22
P
-1dB
IIP3
Gain/voltage sensitivity
0.1
dB/V
Gain frequency variation
0.01
dB/MHz
Reverse isolation
Input match
3
Output match
3
G1hi mode
–19
dB
50
50
–11
dB
–14
dB
Input 1dB gain compression
G1hi mode
–15.5
–14
–12.5
dBm
Input third order intercept
–5.5
–4
–2.5
dBm
IIP3/
t
NF
Input third order intercept
0.011
dB/
°
C
dB
Noise figure
1.9
t
ON
t
OFF
Turn-on time
7
μ
s
μ
s
Turn-off time
0.5
Low Noise Amplifier LNA2
2
G2hi mode
9
10
11
dB
G2hi mode, RF = 1800MHz
–1.5
dB
Gain
G2lo1 mode
–8.5
–7.5
–6.5
S
21
G2lo2 mode
–22.5
–21.5
–20.5
G2lo3 mode
–30
–28.5
–27
dB
G2lo1 mode
18
IP3
G2lo2 mode
20
G2lo3 mode
25
S
21
/
T
Gain temperature sensitivity
G2hi mode
0.003
dB/
°
C
G2lo1,2,3 modes
0.014
S
21
/
V
CCL2
S
21
/
f
S
12
S
11
S
22
P
-1dB
IIP3
Gain/voltage sensitivity
0.1
dB/V
Gain frequency variation
0.01
dB/MHz
Reverse isolation
Input match
3
Output match
3
G2hi mode
–24
dB
50
50
–13
dB
–15
dB
Input 1dB gain compression
G2hi mode
–18
–16
–14
dBm
Input third order intercept
–8
–6
–4
dBm
IIP3/
t
NF
Input third order intercept
0.019
dB/
°
C
dB
Noise figure
2
t
ON
t
OFF
Turn-on time
7
μ
s
μ
s
Turn-off time
0.5
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