參數(shù)資料
型號: SA1920
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Dual-band RF front-end
中文描述: TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48
封裝: 7 X 7 X 1.40 MM, PLASTIC, LQFP-48
文件頁數(shù): 9/36頁
文件大?。?/td> 215K
代理商: SA1920
Philips Semiconductors
Product specification
SA1920
Dual-band RF front-end
1999 Mar 02
9
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
V
CC
= +3.75 V, Freq
RF
= 1960 MHz, Freq
LO
= 2070.52 MHz, P
in
= –3 dBm, T
A
= +25 C; unless otherwise stated
PARAMETERS
MIN
–3
TYP.
+3
MAX
UNITS
NOTES
RF Input Frequency Range
1805
1990
MHz
IF Frequency
100
110.52
125
MHz
LO Frequency
1905
2115
MHz
Power Gain
21
23.5
25
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
40
47
54
dB
Noise Figure
4.0
4.2
4.4
dB
Input Impedance, RF Port
50
Return Loss at Inputs
–10
dB
1
LO leakage at RF Port
–48
dBm
1 dB RF Input Compression Point
–24
dBm
IP3 (3
RD
Order Intermodulation Product)
Referred to the RF Input Port
–15
–12.5
–10
dBm
(2 x LO) – (2 x RF) Spur Performance
–50 dBm IN Referred to RF Input Port
50 dBm IN Referred to RF In ut Port
Measure at LO = 2040 MHz and RF = 1985 MHz
–65
dBc
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 2040 MHz and RF = 2003 MHz.
–62.5
dBc
Image rejection, f
+2f
or f
RX
–2f
IF
Referred to the RF Input Port
30
35
dB
LO Input Power
–5
–3
–1
dBm
Turn ON/OFF Time
sec
High-Band LO Buffer
PARAMETERS
MIN
–3
TYP.
+3
MAX
UNITS
NOTES
LO Frequency Range
1905
2115
MHz
Differential Output Power
–9
dBm
Differential Output Impedance
100
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
1
Turn On/Off Time
30
sec
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