參數(shù)資料
型號： SA1921
廠商： NXP SEMICONDUCTORS
元件分類： 無繩電話/電話
英文描述： Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
中文描述： TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48
封裝： 7 X 7 X 1.40 MM, PLASTIC, QFP-48
文件頁數(shù)： 8/36頁
文件大小： 507K
代理商： SA1921
Philips Semiconductors
Product specification
SA1921
Satellite and cellular dual-band RF front-end
1999 Mar 02
8
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
V
CC
= +3.75 V, Freq
RF
= 943 MHz, Freq
LO
= 1106 MHz, P
LOin
= –3 dBm, T
A
= +25 C; unless otherwise stated.
PARAMETERS
Min
–3
TYP
+3
Max
UNITS
NOTES
System
RF Input Frequency Range
869
943
960
MHz
IF Frequency
163
MHz
LO Frequency
1032
1106
1123
MHz
Cascaded Power Gain; includes 3dB filter loss
21.4
22.5
23.6
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
30
36
42
dB
Cascaded Noise Figure; includes 3dB filter loss
2.6
dB
LNA
LNA Gain
17.6
18.3
19
dB
LNA IIP3 (60 kHz spacing)
–6.0
–5.0
–4.0
dBm
LNA IIP3 (200 kHz spacing)
–3.0
dBm
LNA Noise Figure
1.6
1.7
1.8
dB
LNA 1 dB RF Input Compression Point
–21.0
dBm
Mixer
Mixer Gain
6.9
7.2
7.5
dB
Mixer IIP3 (60 kHz spacing)
4.0
5.0
6.0
dBm
Mixer Noise Figure
10.4
11.0
11.6
dB
Mixer 1 dB RF Input Compression Point
–13.0
dBm
Other
Input Impedance, RF Port
50
Return Loss at LNA Inputs and Output
–10
dB
1
Return Loss at Mixer Input and Outputs
–10
dB
1
LO leakage at RF Port
–42
dBm
LO Input Power
–5
–3
–1
dBm
Turn ON/OFF Time
100
sec
Low-Band LO Buffer
V
CC
= +3.75 V, Freq
LO
= 1106 MHz, P
LOin
= –3 dBm, T
A
= +25 C; unless otherwise stated.
PARAMETERS
LO Frequency
Min
1032
–3
TYP.
1106
+3
Max
1123
UNITS
MHz
NOTES
Differential Output Power
–7
dBm
Differential Output Impedance
100
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
1
Turn On/Off Time
10
sec
NOTE:
1. External matching network is required.
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