參數(shù)資料
型號(hào): SA2410
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: 2.45GHz RF power amplifier and T/R switch
中文描述: 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SOT401-1, 32 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 47K
代理商: SA2410
Philips Semiconductors
Preliminary specification
SA2410
2.45GHz RF power amplifier and T/R switch
2
1997 Sep 09
DESCRIPTION
The SA2410 is a GaAs monolithic power amplifier with an integrated
T/R switch designed to meet requirements for 802.11 (WLAN). The
SA2410 uses an on–chip 4 GHz oscillator to generate the negative
bias, thus eliminating the need for a negative supply. It operates
from 3V to 5.5V and consumes 125 mA with an output power of 18.5
dB (typ). It is suitable for other 2.45 GHz ISM band applications.
FEATURES
V
CC
=3V–5.5V
No negative bias needed
I
CC
=125mA (typ) @ 3.3V
P
OUT
=18.5 dB(typ)
IM3<–30dBc
IM5<–50dBc
Gain=29dB (typ)
Attenuation range=16dB (typ)
LQFP–32 package
APPLICATIONS
802.11 WLAN
2.4–2.5 GHz ISM BAND
SR01422
V
D4
V
D3
GND
V
GC1
V
GC2
GND
GND
GND
GND
GND
VG
PA
V
NEG
1
2
3
4
5
6
7
10
11
12
13
14
19
16
8
GND
SW
OUT1
9
V
C
V
S
S
I
V
O
V
C
S
O
G
G
P
I
G
29
G
30
G
28
G
31
2
26
25
32
24
23
26
21
20
19
18
17
G
GND
G
VD
PA
OUT
Figure 1.
Pin Configuration
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
–40
°
C+85
°
C
ORDER CODE
SA2410
DWG #
SOT401–1
32–Pin Plastic Thin Quad Flat Package
GENERAL SPECIFICATIONS
Symbol
T
V
CC
I
CC
Power Amplifier
f
RF
IM3
IM5
T
on
T
off
Gain
Parameter
Condition
Min
–40
3
Typ
Max
+85
5.5
Unit
C
V
mA
Temperature
Supply V
Supply I
3.3 volts
125
Frequency Range
IM3 2 tones
IM5 2 tones
Transmit power on
Xmit power down
Small signal gain
2.4
30
50
2.5
GHz
dBc
dBc
μ
s
μ
s
dB
Including neg. supply
2
2
29
P
out
Output power
IM3=30dBc
IM5=50dBc
125mA@3.3 volts
17.5
18.5
dBm
Eff.
Gt1
Gt2
Gr
Gvd
Efficiency
Gain variation with temp
Gain variation with temp
Ripple
Gain variation with supply
25
3.5
2.0
1
0.5
%
dB
dB
dB
dB
–40 to +85
°
C
0–70
°
C
2.45
3.3 volts
0.05 GHz
0.3 V
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