參數(shù)資料
型號: SA3601
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Low voltage dual-band RF front-end
中文描述: TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBCC32
封裝: 5 X 5 MM, 0.65 MM HEIGHT, HEAT SINK, PLASTIC, MO-217, SOT-560-1, BCC-32
文件頁數(shù): 6/14頁
文件大小: 90K
代理商: SA3601
Philips Semiconductors
Preliminary specification
SA3601
Low voltage dual-band RF front-end
1999 Nov 09
6
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
PARAMETER
LIMITS
UNITS
MIN.
–0.3
MAX.
+4.5
V
CC
V
IN
P
D
T
J MAX
P
MAX
I
MAX
T
STG
T
O
NOTES:
1. IC is protected for ESD voltages up to 500 V (human body model).
Supply voltage
V
Voltage applied to any other pin
Power dissipation, T
amb
= +25
°
C (still air)
Maximum junction temperature
–0.3
V
CC
+0.3
TBD
V
mW
°
C
dBm
150
Power input/output
+20
DC current into any I/O pin
–10
+10
mA
°
C
°
C
Storage temperature range
–65
+150
Operating temperature
–40
+85
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V
CC
= +3.0 V, T
amb
= +25
°
C; unless otherwise specified
SYMBOL
PARAMETER
TEST CONDITIONS
PD1
PD2
0
TESTER LIMITS
TYP
0.1
UNIT
PD3
0
MIN
MAX
1
Sleep mode
0
μ
A
mA
Tx mode, LO lowband buffer
0
0
1
4.3
5.5
Rx mode cellular, low gain
0
1
0
10.1
12
mA
I
CC
Rx mode cellular, high gain
0
1
1
14
16.5
mA
Rx mode PCS, low gain, x2
1
0
0
17.5
21
mA
Rx mode PCS, high gain, x2
1
0
1
23.5
28
mA
Rx mode PCS, low gain, no x2
1
1
0
10
TBD
mA
Rx mode PCS, high gain, no x2
1
1
1
15.5
TBD
mA
V
IH
V
IL
I
BIAS
Input HIGH voltage
0.5xV
CC
–0.3
V
CC
+0.3
0.2xV
CC
+5
V
Input LOW voltage
V
μ
A
Input bias current
Logic 1 or logic 0
–5
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