參數(shù)資料
型號: SA5209D,602
廠商: NXP Semiconductors
文件頁數(shù): 11/17頁
文件大小: 0K
描述: IC VGA 850MHZ 16-SOIC
標(biāo)準(zhǔn)包裝: 50
放大器類型: 可變增益
電路數(shù): 1
輸出類型: 差分
電流 - 輸入偏壓: 700nA
電流 - 電源: 43mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 7 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SO
包裝: 管件
其它名稱: 568-1196-5
935030700602
SA5209D
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
-0.5 to +8.0
V
PD
Power dissipation, TA = 25oC (still air)1
16-Pin Plastic DIP
16-Pin Plastic SO
1450
1100
mW
TJMAX
Maximum operating junction temperature
150
°C
TSTG
Storage temperature range
-65 to +150
°C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA:
16-Pin DIP:
θJA = 85°C/W
16-Pin SO:
θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
VCC1 = VCC2 = 4.5 to 7.0V
V
TA
Operating ambient temperature range
SA Grade
-40 to +85
°C
TJ
Operating junction temperature range
SA Grade
-40 to +105
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ICC
Supply current
DC tested
38
43
48
mA
ICC
Supply current
Over temperature1
30
55
mA
A
Voltage gain (single ended in/single ended out)
DC tested, RL = 10k
17
19
21
dB
AV
Voltage gain (single-ended in/single-ended out)
Over temperature1
16
22
dB
A
Voltage gain (single ended in/differential out)
DC tested, RL = 10k
23
25
27
dB
AV
Voltage gain (single-ended in/differential out)
Over temperature1
22
28
dB
RIN
Input resistance (single-ended)
DC tested at
±50A
0.9
1.2
1.5
k
RIN
In ut resistance (single-ended)
Over temperature1
0.8
1.7
k
ROUT
Output resistance (single-ended)
DC tested at
±1mA
40
60
75
ROUT
Out ut resistance (single-ended)
Over temperature1
35
90
VOS
Output offset voltage (output referred)
+20
±100
mV
VOS
Out ut offset voltage (out ut referred)
Over temperature1
±250
mV
VIN
DC level on inputs
1.6
2.0
2.4
V
VIN
DC level on in uts
Over temperature1
1.4
2.6
V
VOUT
DC level on outputs
1.9
2.4
2.9
V
VOUT
DC level on out uts
Over temperature1
1.7
3.1
V
PSRR
Output offset supply rejection ratio
20
45
dB
PSRR
(output referred)
Over temperature1
15
dB
VBG
Bandgap reference voltage
4.5V<VCC<7V
RBG = 10k
1.2
1.32
1.45
V
BG
gg
Over temperature1
1.1
1.55
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