參數資料
型號： SA636
廠商： NXP Semiconductors N.V.
英文描述： Low voltage high performance mixer FM IF system with high-speed RSSI
中文描述： 低電壓高性能混頻器IF系統(tǒng)與調頻高速的RSSI
文件頁數： 4/17頁
文件大小： 173K
代理商： SA636
Philips Semiconductors
Product specification
SA636
Low voltage high performance mixer FM IF system
with high-speed RSSI
1997 Nov 07
4
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C; V
CC
= +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level =
-45dBm; FM modulation = 1kHz with
±
125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test
circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The
limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
LIMITS
SA636
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN
MAX
Mixer/Osc section (ext LO = 160mV
RMS
)
f
IN
Input signal frequency
f
OSC
External oscillator (buffer)
Noise figure at 240MHz
Third-order input intercept point
Conversion power gain
RF input resistance
RF input capacitance
Mixer output resistance
IF section
IF amp gain
Limiter gain
Input limiting -3dB
AM rejection
Data level
3dB data bandwidth
SINAD sensitivity
THD
Total harmonic distortion
S/N
Signal-to-noise ratio
500
500
12
-16
11
700
3.5
330
MHz
MHz
dB
dBm
dB
pF
Matched f1=240.05; f2=240.35MHz
Matched 14.5dBV step-up
Single-ended input
8
14
(Pin 20)
330
load
330
load
Test at Pin 18
80% AM 1kHz
R
LOAD
= 100k
38
54
–105
50
130
700
16
-43
60
0.2
0.6
1.3
dB
dB
dBm
dB
mV
RMS
kHz
dB
dB
dB
V
V
V
120
600
RF level = -111dBm
-38
No modulation for noise
IF level = -118dBm
IF level = -68dBm
IF level = -10dBm
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
0.5
1.0
1.8
IF RSSI output with buffer
0.3
0.9
IF RSSI output rise time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
IF RSSI output fall time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
RSSI range
RSSI accuracy
IF input impedance
IF output impedance
Limiter input impedance
Limiter output impedance
Limiter output level with no load
RF/IF section (int LO)
System RSSI output
System SINAD
1.2
1.1
μ
s
μ
s
2.0
7.3
90
+1.5
330
330
330
300
130
μ
s
μ
s
dB
dB
mV
RMS
RF level = -10dBm
RF level = -106dBm
1.4
12
V
dB
相關PDF資料
PDF描述
SA637 Low-voltage digital IF receiver
SA637DK Low-voltage digital IF receiver
SA637DK-T Demodulator， Other/Special/Miscellaneous
SA638 IS-54 IF receiver
SA639 Low voltage mixer FM IF system with filter amplifier and data switch
相關代理商/技術參數
參數描述
SA636BS,115 功能描述:射頻混合器 RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
SA636DK 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low voltage high performance mixer FM IF system with high-speed RSSI
SA636DK,112 功能描述:射頻混合器 LV HI PERF MIX FM IF SY W/RSSI RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
SA636DK,118 功能描述:射頻混合器 LV HI PERF MIX FM IF SY W/RSSI RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
SA636DK/01 功能描述:射頻混合器 LV HI PERF MIX FM IF SY W/RSSI RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
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