- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372107 > SA7016 (NXP SEMICONDUCTORS) 1.3GHz low voltage fractional-N synthesizer PDF資料下載
參數(shù)資料
| 型號(hào)： | SA7016 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | XO, clock |
| 英文描述： | 1.3GHz low voltage fractional-N synthesizer |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 1300 MHz, PDSO16 |
| 封裝： | PLASTIC, SOT-403-1, TSSOP-16 |
| 文件頁(yè)數(shù)： | 4/18頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | SA7016 |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
Philips Semiconductors
Product specification
SA7016
1.3GHz low voltage fractional-N synthesizer
1999 Nov 04
4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
Digital supply voltage
–0.3
+5.5
V
V
DDCP
Analog supply voltage
–0.3
+5.5
V
V
DDCP
–V
DD
Difference in voltage between V
DDCP and
V
DD
(V
DDCP
≥
V
DD
)
–0.3
+2.8
V
V
n
Voltage at pins 1, 2, 5, 6, 11 to 16
–0.3
V
DD
+ 0.3
V
V
1
Voltage at pin 8, 9
–0.3
V
DDCP
+ 0.3
V
V
GND
Difference in voltage between GND
CP
and GND (these pins should
be connected together)
–0.3
+0.3
V
T
stg
Storage temperature
–55
+125
C
T
amb
Operating ambient temperature
–40
+85
C
T
j
Maximum junction temperature
150
C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j–a
Thermal resistance from junction to ambient in free air
120
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SA7016DH | 1.3GHz low voltage fractional-N synthesizer |
| SA701 | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701D | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701N | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SA7016DH | 制造商:PHILIPS-SEMI 功能描述: |
| SA701D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA702 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| SA702/DF9M | 制造商:Hirose 功能描述:903-4508-0-00 EACH 制造商:Hirose 功能描述:SA702/DF9M |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。