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參數(shù)資料
| 型號： | SA910 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Variable gain RF predriver amplifier |
| 中文描述： | TELECOM, CELLULAR, RF FRONT END CIRCUIT, PDSO20 |
| 封裝： | 4.40 MM, PLASTIC, SOT-266-1, SSOP-20 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 114K |
| 代理商： | SA910 |
Philips Semiconductors
Product specification
SA910
Variable gain RF predriver amplifier
1997 Aug 12
6
PIN DESCRIPTIONS
Pin
No.
Mnemonic
Function
1
V
CC1
V
REF
GND
Power supply for power sense loop and off-chip bias
2
Power sense reference voltage input
3
Ground
4
RF
IN
GND
Pre-driver input
5
Ground
6
GND
Ground
7
OUTLPF
Power sense detected output
8
GND
Ground
9
VC
Gain control input
10
V
CC
BIAS
OFFSET
Power supply for on-chip bias
11
External power amp bias offset adjustment
12
PWRUP
Power-up input
13
GND
Ground
14
RF
OUT2
GND
Pre-driver output (open collector)
15
Ground
16
GND
Ground
17
RF
OUT1
GND
Output of first stage (open collector)
18
Ground
19
BIAS
OUT
P
SENSE
Output to bias external power amplifier stage
20
Power sense input
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
1/V
CC
BIAS
DC supply voltages
Voltage applied to any other pin
1
P
D
Power dissipation
P
IN
Input drive power
P
DET
Input detect power
P
L
Load power
T
STG
Storage temperature range
NOTE:
1. Except RF
OUT
1 and RF
OUT
2 which can have 8V max.
PARAMETER
RATING
-0.3 to +6.0
-0.3 to (V
CC
1 + 0.3)
1.0
5
20
500
UNITS
V
V
W
mW
mW
mW
°
C
-65 to +150
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
1/V
CC
BIAS
Supply voltage
T
A
Operating ambient temperature range
NOTE:
1. R
th
= 75
°
c/w
PARAMETER
RATING
3 to 3.6
-40 to +85
UNITS
V
°
C
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