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參數(shù)資料
| 型號(hào)： | SB01W05C |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.1 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | CP, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | SB01W05C |
Data Sheet D16135EJ2V0DS
2
2SC2885, 2946, 2946(1)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 1.0 A, IB = 0.1 A, L = 500
H*
200
V
Collector to emitter voltage
VCEX(SUS)
IC = 1.0 A, IB1 =
IB2 = 0.1 A*
Ta = 125
°C, L = 180
H, clamped
200
V
Collector cutoff current
ICBO
VCB = 250 V, IE = 0
10
A
Collector cutoff current
ICEX1
VCE = 250 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 250 V, VBE(OFF) =
1.5 V, Ta = 125°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
1.0
A
hFE1
VCE = 5.0 V, IC = 0.1 A*
20
60
160
DC current gain
hFE2
VCE = 5.0 V, IC = 1.0 A*
15
Collector saturation voltage
VCE(sat)
IC = 1.0 A, IB = 0.1 A*
1.0
V
Base saturation voltage
VBE(sat)
IC = 1.0 A, IB = 0.1 A*
1.5
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.0
s
Fall time
tf
IC = 1.0 A, RL = 100
IB1 =
IB2 = 0.1 A, VCC 100 V
Refer to the test circuit.
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
N
M
L
K
hFE1
20 to 50
30 to 70
50 to 100
80 to 160
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
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| SB01W05C-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:DIODE SCH ARR 50V 0.1A SOT23 |
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| SB020_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Miniature Schottky Barrier Rectifier |
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