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參數資料
| 型號： | SB1100TR |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | SB1100TR |
SB120-SB1
100
SB120 - SB1100
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TL = 75
°C
1.0
A
if(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30
A
PD
Total Device Dissipation
Derate above 25
°C
1.25
12.5
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
80
°C/W
Tstg
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
-65 to +125
°C
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Features
1.0 ampere operation at T
A
= 75°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Parameter
Device
Units
120
130
140
150
160
180
1100
Peak Repetitive Reverse Voltage
20
30
40
50
60
80
100
V
Maximum RMS Voltage
14
21
28
35
42
56
80
V
DC Reverse Voltage (Rated VR)
20
30
40
50
60
80
100
V
Maximum Reverse Current
@ rated VR
TA = 25
°C
TA = 100
°C
0.5
10
mA
Maximum Forward Voltage @ 1.0 A
500
700
850
mV
Maximum Full Load Reverse Current,
Full Cycle
TA = 75
°C
30
mA
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
110
pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
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相關代理商/技術參數 |
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|---|---|
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