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參數(shù)資料
| 型號： | SBA-5089Z |
| 英文描述： | DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier |
| 中文描述： | 直流5千兆赫，級聯(lián)的InGaP / GaAs HBT的MMIC放大器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 318K |
| 代理商： | SBA-5089Z |
2
EDS-102743 Rev. D
Preliminary
SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
Typical RF Performance at Key Operating Frequencies
36.0
Test Conditions:
Symbol
Parameter
Unit
100
500
850
1950
2400
3500
G
Small Signal Gain
dB
20.5
20.2
19.9
18.0
17.1
15.3
OIP
3
P
1dB
IRL
Output Third Order Intercept Point
dBm
36.3
35.8
34.0
32.7
30.9
Output Power at 1dB Compression
Input Return Loss
dBm
19.8
19.8
19.7
19.5
18.8
17.1
dB
29
27
25
20
17
11.8
ORL
Output Return Loss
dB
27
21
17
11
11
11
S
21
NF
Reverse Isolation
dB
22
22
23
23
23
23
Noise Figure
dB
I
D
= 80 mA Typ.
T
L
= 25oC
4.1
4.3
4.2
4.5
----
----
Frequency (MHz)
Test Conditions:
V
S
= 8 V
R
BIAS
= 39 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Absolute Maximum Ratings
Parameter
Absolute Limit
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
1
30
mA
6 V
+17 dBm
Max Operating Dissipated
Power
0.65 W
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l T
L
=T
LEAD
Noise Figure vs. Frequency
2
3
4
5
6
0
0.5
1
1.5
2
Frequency (GHz)
N
+25c
-40c
+85c
OP
3
vs. Frequency
26
28
30
32
34
36
38
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
O
3
+25c
-40c
+85c
P1dB vs. Frequency
15
16
17
18
19
20
21
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
P
1
+25c
-40c
+85c
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