參數(shù)資料
型號: SBC817-40LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: General Purpose Transistors(NPN Silicon)
中文描述: 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 58K
代理商: SBC817-40LT3
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 6
1
Publication Order Number:
BC81716LT/D
BC81716LT1,
BC81725LT1, BC81740LT1
General Purpose
Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
45
V
CollectorBase Voltage
V
CBO
50
V
EmitterBase Voltage
V
EBO
5.0
V
Collector Current Continuous
I
C
500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board, (Note 1)
T
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
xxD
1
2
3
xx
D
= Specific Device Code
= Date Code
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