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參數(shù)資料
| 型號(hào)： | SBCT2040 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Rectifiers - Common Cathode |
| 中文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 127K |
| 代理商： | SBCT2040 |
SBCT2020 ... SBCT20100
SBCT2020 ... SBCT20100
Schottky Barrier Rectifiers – Common Cathode
Schottky-Barrier-Gleichrichter – Gemeinsame Kathode
Version 2007-06-27
Dimensions - Mae [mm]
Nominal Current
Nennstrom
20 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case – Kunststoffgehuse
TO-220AB
Weight approx.
Gewicht ca.
2.2g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
Forward Voltage
Durchlass-Spannung
V
F
[V]
1
)
2
)
I
F
= 5 A
I
F
= 10 A
SBCT2020
20
20
< 0.52
< 0.55
SBCT2030
30
30
< 0.52
< 0.55
SBCT2040
40
40
< 0.52
< 0.55
SBCT2045
45
45
< 0.52
< 0.55
SBCT2050
50
50
< 0.63
< 0.70
SBCT2060
60
60
< 0.63
< 0.70
SBCT2090
90
90
< 0.77
< 0.85
SBCT20100
100
100
< 0.77
< 0.85
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
C
= 100°C
I
FAV
I
FAV
10 A
2
)
20 A
3
)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
30 A
2
)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
SBCT2020...
SBCT2060
T
A
= 25°C
I
FSM
130/150 A
2
)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
SBCT2080...
SBCT20100
T
A
= 25°C
I
FSM
110/125 A
2
)
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
T
A
= 25°C
i
2
t
80 A
2
s 2)
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage – bei reduzierter Sperrspannung
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
V
R
≤ 80% V
RRM
V
R
≤ 50% V
RRM
T
j
T
j
T
j
-50...+150°C
≤ 180°C
≤ 200°C
1
2
3
T
j
= 25°C
Per diode Pro Diode
Per device (parallel operation) Pro Bauteil (Parallelbetrieb)
Diotec Semiconductor AG
http://www.diotec.com/
1
1
1
3
3
10
±0.2
1.5
0.9
2.54
Type
Typ
3.8
1 2 3
4
1 2 3
4
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