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參數(shù)資料
| 型號： | SC00260912 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | MIS Chip Capacitors |
| 中文描述： | 管理信息系統(tǒng)貼片電容 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SC00260912 |
Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.com
200136 Rev.A Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice. February 7, 2005
1
SC Series: MIS Chip Capacitors
DATA SHEET
Description
Skyworks MIS Chip Capacitors are available in a wide range of
sizes and capacitance values. They are frequently used in
applications requiring DC blocking, RF bypassing, or as a fixed
capacitance tuning element in filters, oscillators, and matching
networks.The devices have a dielectric composed of thermally
grown silicon dioxide over which a layer of silicon nitride is
deposited.This dielectric possesses a low temperature coefficient
of capacitance and very high insulation resistance.The devices
also exhibit excellent long term stability making them suitable for
high reliability applications.The capacitors have a high dielectric
breakdown which permits the use of thin dielectrics resulting in
large capacitance per unit area.The temperature coefficient is
less that 50 ppm/°C, and operation is suitable from -65 °C to
200 °C. Compared to ceramic capacitors, Skyworks MIS chip
capacitors offer higher Q, and a lower insertion loss of 0.04 dB,
in a 50
accommodate high volume automated assembly
methods, wafers can be supplied on expanded film frame.To
reduce cost, chips can be supplied with only sample testing
packaged in vials. Packaging in waffle packs with 100% elec-
trical test and visual inspection is always available if required.
Features
●
Readily available from stock
●
High reliability silicon oxide–nitride dielectric
●
Low loss — typically 0.04 dB in a 50
system
●
Operation through 26 GHz
●
Wide temperature operation
Characteristic
Value
Operating temperature range (T
OP
)
Storage temperature range (T
STG
)
Dielectric withstanding voltage
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
-65 to +200 °C
-65 to +200 °C
100 V
Absolute Maximum Ratings
CAUTION:
Although this device is designed to be as robust as
possible, Electrostatic Discharge (ESD) can damage
this device.This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Electrical Specifications
Capacitance range
1:
0.8 to 1000 pF
Temperature coefficient: 50 ppm/°C typical
Capacitance tolerance
2:
±20%
Operating temperature: -65 °C to 200 °C
Dielectric withstanding voltage: 100 V
Insulation resistance: 10
5
megohms typical
Leakage current: typ. < 1 nA
BIAS
BIAS
OUTPUT
INPUT 1
INPUT 2
C
1
D
1
D
2
C
2
C
4
C
3
Typical SPDT Switch
C
2
, C
3
— Chip MIS capacitor
C
1
, C
4
— Chip or beam — lead MIS capacitor
D
1
, D
2
DSG9500 beam — lead pIN diode
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