參數(shù)資料
型號(hào)： SCG015B-G
英文描述：  Watt, High Linearity InGaP HBT Amplifier
中文描述： 瓦，高線性InGaP HBT功率放大器
文件頁數(shù)： 3/5頁
文件大?。?/td> 211K
代理商： SCG015B-G
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Specifications and information are subject to change without notice
Page 3 of 5 October 2006
SCG015
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
1960 MHz Application Circuit (SCG015B-PCB1960)
Typical RF Performance at 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device Voltage
Quiescent Current
Please see note 2 on page 1.
IND
L=3.3 nH
CAP
ID=C7
C=1.2 pF
RES
ID=R3
R=220 Ohm
CAP
C=56 pF
CAP
ID=C5
CAP
ID=C1
C=56 pF
IND
ID=L2
L=15 nH
RES
ID=R1
IND
ID=L1
L=15 nH
CAP
C=1000 pF
CAP
ID=C3
C=.1uF
CAP
ID=C6
C=56 pF
RES
ID=R4
DIODE1
ID=D1
CAP
C=1.2 pF
RES
ID=R2
R=390 Ohm
SUBCKT
NET="SCG015"
PORT
P=2
PORT
P=1
Z=50 Ohm
+8 V
a system using a DC regulator.
boards. It is not specifically required in the final circuit layout in
The diode D1 is used as over-voltage protection on the evaluation
8.2 v
Ssg, OIP3 & P1dB vs.
Temperature @ 1.96GHz
10
12
14
16
18
20
22
24
26
-40
-15
10
35
60
85
Temperature (°C)
G
36
37
38
39
40
41
42
43
44
O
Gain
P1dB
OIP3
ACPR1 vs. Pout
vs. Temperature at 1.96GHz
-70
-65
-60
-55
-50
-45
-40
11
13
15
17
Pout (dBm)
d
85°C
-40°C
25°C
2140 MHz Application Circuit (SCG015B-PCB2140)
Typical RF Performance at 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Noise Figure
Device Voltage
Quiescent Current
Please see note 2 on page 1.
IND
L=3.3 nH
CAP
C=.7 pF
RES
ID=R3
R=220 Ohm
CAP
C=56 pF
CAP
ID=C5
CAP
ID=C1
C=56 pF
IND
ID=L2
L=15 nH
RES
ID=R1
R=30 Ohm
IND
ID=L1
L=15 nH
CAP
ID=C2
C=1000 pF
CAP
ID=C3
CAP
C=56 pF
RES
R=22 Ohm
DIODE1
ID=D1
C=1 pF
RES
ID=R2
SUBCKT
NET="SCG015"
PORT
P=2
Z=50 Ohm
PORT
P=1
Z=50 Ohm
+8 V
a system using a DC regulator.
The diode D1 is used as over-voltage protection on the evaluation
8.2 v
Ssg, OIP3, & P1dB vs.
Temperature @ 2.14GHz
12
14
16
18
20
22
24
-40
-15
10
35
60
85
Temperature (°C)
S
36
37
38
39
40
41
42
O
Ssg
P1dB
OIP3
1960 MHz
16.5 dB
-16 dB
-11 dB
+24 dBm
+40 dBm
+17 dBm
5 dB
+5 V
100 mA
2140 MHz
15 dB
-20 dB
-10 dB
+24 dBm
+40 dBm
5 dB
+5 V
100 mA
C7 placed at silkscreen marker ‘A” or center of component
placed at 3.9 deg. @ 1900 MHz away from pin 1.
C8 is placed at silkscreen
marker ‘7” or center of
component placed at 32 deg.
@ 1.9 GHz away from pin 3.
C7 placed at silkscreen marker ‘A” or center of
component placed at 4.4 deg. @ 2.14 GHz away
from pin 1.
C8 is placed at silkscreen marker ‘7” or
center of component placed at 37 deg. @
2.14 GHz away from pin 3.
相關(guān)PDF資料
PDF描述
SCG015B-PCB1960  Watt, High Linearity InGaP HBT Amplifier
SCG015B-PCB2140  Watt, High Linearity InGaP HBT Amplifier
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SCG015B-PCB1960 制造商:WJCI 制造商全稱:WJCI 功能描述: Watt, High Linearity InGaP HBT Amplifier
SCG015B-PCB2140 制造商:WJCI 制造商全稱:WJCI 功能描述: Watt, High Linearity InGaP HBT Amplifier
SCG05D10051-21BB 制造商:JDSU 制造商全稱:JDS Uniphase Corporation 功能描述:Benchtop/Rackmount Programmable Switches
SCG05D10051-21BF 制造商:JDSU 制造商全稱:JDS Uniphase Corporation 功能描述:Benchtop/Rackmount Programmable Switches
SCG05D10051-21BQ 制造商:JDSU 制造商全稱:JDS Uniphase Corporation 功能描述:Benchtop/Rackmount Programmable Switches
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